Growth parameters of Bi0.1Y2.9Fe5O12 thin films for high frequency applications

The growth and characterization of Bismuth (Bi) substituted YIG (Bi–YIG, Bi0.1Y2.9Fe5O12) thin films are reported. Pulsed laser deposited (PLD) with thicknesses ranging from 20 to 150 nm were grown on Gadolinium Gallium Garnet substrates. Two substrate orientations (100) (111) considered. enhanced distribution Bi3+ ions at dodecahedral site along is observed lead an increment in lattice constant 12.379 Å 12.415 oriented films. Atomic force microscopy images showed decreasing roughness increasing film thickness. Compared films, increase ferromagnetic resonance linewidth consequent Gilbert damping. lowest damping values found be (1.06±0.12) × 10−4 for (2.30±0.36) thickness ≈150 nm. extrinsic linewidth, effective magnetization, anisotropic field related the orientation. In addition, in–plane angular variation established four–fold symmetry unlike case This study prescribes conditions PLD single–crystalline Bi–YIG towards desired high frequency magneto–optical device applications.